Metal gate structure for midgap semiconductor device and method of making same
US9496143B2 · kind B2 · utility
4Cited by
0References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 6, 2012 |
| Grant date | Nov 15, 2016 |
| Priority date | — |
| Expiry date | Mar 25, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/667
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A PFET-based semiconductor gate structure providing a midgap work function for threshold voltage control between that of a NFET and a PFET is created by including an annealed layer of relatively thick TiN to dominate and shift the overall work function down from that of PFET. The structure has a PFET base covered with a high-k dielectric, a layer of annealed TiN, a layer of unannealed TiN, a thin barrier over the unannealed TiN, and n-type metal over the thin barrier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.