Method of writing to a spin torque magnetic random access memory
US9502093B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 27, 2016 |
| Grant date | Nov 22, 2016 |
| Priority date | — |
| Expiry date | May 27, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/0411
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A spin-torque magnetoresistive memory includes array read circuits and array write circuits coupled to an array of magnetic bits. The array read circuits sample magnetic bits in the array, apply a write current pulse to the magnetic bits to set them to a first logic state, resample the magnetic bits using an additional offset current, and compare the results of sampling and resampling to determine the bit state for each magnetic bit. For each of the magnetic bits in the page having the second logic state, the array write circuits initiate a write-back, wherein the write-back includes applying a second write current pulse having opposite polarity in comparison with the first write current pulse to set the magnetic bit to the second state. A read or write operation may be received after initiation of the write-back where the write-back can be aborted for a portion of the bits in the case of a write operation. The write-back may be performed such that different portions of the magnetic bits are written back at different times, thereby staggering the write-back current pulses in time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.