Patent · US Active

Non-volatile multiple time programmable memory device

US9508439B2 · kind B2 · utility

3Cited by

3References

28Claims

0Family size

Assignee

QUALCOMM Incorporated · US

Inventors

Xia Li · San Diego, US
Jeffrey Junhao Xu · San Diego, US
Xiao Lu · Nanjing, CN
Matthew Michael Nowak · San Diego, US
Seung H. Kang · San Diego, US
Xiaonan Chen · Boise, US
Zhongze Wang · San Diego, US
Yu Lu · San Diego, US

Key dates

Filing date	Jan 21, 2015
Grant date	Nov 29, 2016
Priority date	—
Expiry date	Jan 25, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/691
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

An apparatus includes a multiple time programmable (MTP) memory device. The MTP memory device includes a metal gate, a substrate material, and an oxide structure between the metal gate and the substrate material. The oxide structure includes a hafnium oxide layer and a silicon dioxide layer. The hafnium oxide layer is in contact with the metal gate and in contact with the silicon dioxide layer. The silicon dioxide layer is in contact with the substrate material. The MTP device includes a transistor, and a non-volatile state of the MTP memory device is based on a threshold voltage of the transistor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.