Methods of forming strained channel regions on FinFET devices by performing a heating process on a heat-expandable material
US9508848B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 1, 2016 |
| Grant date | Nov 29, 2016 |
| Priority date | — |
| Expiry date | Feb 1, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/797
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One illustrative method disclosed herein includes, among other things, removing at least a portion of a vertical height of portions of an overall fin structure that are not covered by a gate structure so as to result in the definition of a remaining portion of the overall fin structure that is positioned under the gate structure, wherein the remaining portion comprises a channel portion and a lower portion located under the channel portion. The method continues with the formation of a layer of heat-expandable material (HEM), performing a heating process on the HEM so as to cause the HEM to expand, recessing the HEM so as to expose edges of the channel portion and growing a semiconductor material above the HEM using the exposed edges of the channel portion as a growth surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.