Patent · US Active

Method of forming a gate mask for fabricating a structure of gate lines

US9514942B1 · kind B1 · utility

4Cited by

7References

20Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Elliot John Smith · Dresden, DE
Thorsten Kammler · Radeberg, DE
Andreas Hellmich · Dresden, DE
Carsten Grass · Dresden, DE

Key dates

Filing date	Mar 3, 2016
Grant date	Dec 6, 2016
Priority date	—
Expiry date	Mar 3, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/0135
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of forming a gate structure over a hybrid substrate structure with topography having a bulk region and an SOI region is disclosed including forming a gate material layer above the SOI and bulk regions, forming a mask layer above the gate material layer, forming a first planarization layer above the mask layer, forming a first gate structure masking pattern above the first planarization layer, patterning the first planarization layer in alignment with the first gate structure masking pattern, and patterning the mask layer in accordance with the patterned first planarization layer, resulting in a gate mask disposed above the gate material layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.