Patent · US Active

Atomic layer etch process using an electron beam

US9520294B2 · kind B2 · utility

1Cited by

1References

16Claims

0Family size

Assignee

Applied Materials, Inc. · US

Inventors

Ankur Agarwal · Mountain View, US
Rajinder Dhindsa · Pleasanton, US
Shahid Rauf · Pleasanton, US

Key dates

Filing date	Oct 2, 2014
Grant date	Dec 13, 2016
Priority date	—
Expiry date	Oct 2, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/32135
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Atomic layer etching using alternating passivation and etching processes is performed with an electron beam plasma source, in which the ion energy is set to a low level below the etch threshold of the material to be etched during passivation and to a higher level above the etch threshold during etching but below the etch threshold of the unpassivated material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.