Patent · US Active

Planar passivation for pads

US9520371B2 · kind B2 · utility

4Cited by
0References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 27, 2014
Grant dateDec 13, 2016
Priority date
Expiry dateOct 27, 2034

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/35121
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Devices and methods for forming a device are presented. The method includes providing a substrate having circuit component and a dielectric layer over the substrate. The dielectric layer includes a plurality of inter level dielectric (ILD) layers and the uppermost dielectric layer includes at least one interconnect. A pad dielectric layer is provided over the uppermost ILD layer. A pad interconnect for receiving a wire bond is formed in the pad dielectric layer. The pad interconnect is coupled to the at least one interconnect of the uppermost ILD layer. A top surface of the pad dielectric layer is substantially coplanar with a top surface of the pad interconnect. A passivation layer is formed over the pad dielectric layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.