Method of making a resistive random access memory

US9520562B2 · kind B2 · utility

Assignee

• ASM IP Holding B.V. · NL

Inventors

• Qi Xie · Wilsele, BE
• Jan Willem Maes · Wilrijk, BE
• Tom E. Blomberg · Vantaa, FI
• Marko Tuominen · Helsinki, FI
• Suvi Haukka · Helsinki, FI
• Robin Roelofs · Leuven, BE
• Jacob Woodruff · Scottsdale, US

Key dates

• Filing date: Jul 17, 2014
• Grant date: Dec 13, 2016
• Expiry date: Jul 25, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8833
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The disclosed technology generally relates to semiconductor devices, and relates more particularly to resistive random access memory devices and methods of making the same. In one aspect, a method of forming a resistive random access memory cell of a random access memory device includes forming a first electrode and forming a resistive switching material comprising an oxide of a pnictogen element by atomic layer deposition. The method additionally includes forming a metallic layer comprising the pnictogen element by atomic layer deposition (ALD). The resistive switching material is interposed between the first electrode and the metallic layer.