Methods of removing portions of fins by preforming a selectively etchable material in the substrate
US9524908B2 · kind B2 · utility
11Cited by
1References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 1, 2014 |
| Grant date | Dec 20, 2016 |
| Priority date | — |
| Expiry date | Jan 10, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0158
Abstract
One illustrative method disclosed herein includes, among other things, forming a region of a sacrificial material in a semiconductor substrate at a location where the portion of the fin to be removed will be located, after forming the region of sacrificial material, performing at least one first etching process to form a plurality of fin-formation trenches that define the fin, wherein at least a portion of the fin is comprised of the sacrificial material, and performing at least one second etching process to selectively remove substantially all of the sacrificial material portion of the fin relative to the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.