Cobalt removal for chamber clean or pre-clean process
US9528183B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 17, 2014 |
| Grant date | Dec 27, 2016 |
| Priority date | — |
| Expiry date | Apr 17, 2034 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB08B9/00
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Implementations described herein generally relate to methods and apparatus for in-situ removal of unwanted deposition buildup from one or more interior surfaces of a semiconductor substrate processing chamber. In one implementation, a method for removing cobalt or cobalt containing deposits from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber is provided. The method comprises forming a reactive species from the fluorine containing cleaning gas mixture, permitting the reactive species to react with the cobalt and/or the cobalt containing deposits to form cobalt fluoride in a gaseous state and purging the cobalt fluoride in gaseous state out of the substrate processing chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.