Memory cells using multi-pass programming
US9530504B2 · kind B2 · utility
5Cited by
2References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2015 |
| Grant date | Dec 27, 2016 |
| Priority date | — |
| Expiry date | Jun 18, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/5628
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method is provided for programming non-volatile memory cells. The non-volatile memory cells are accessible by a plurality of word lines. The method includes using a four-pass programming technique to program a block of the non-volatile memory cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.