Titanium target for sputtering
US9530628B2 · kind B2 · utility
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5References
16Claims
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Assignee
Inventors
Key dates
| Filing date | Feb 3, 2012 |
| Grant date | Dec 27, 2016 |
| Priority date | — |
| Expiry date | May 9, 2033 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/3414
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A high-purity titanium target for sputtering, which contains, as additive components, one or more elements selected from Al, Si, S, Cl, Cr, Fe, Ni, As, Zr, Sn, Sb, B, and La in a total amount of 3 to 100 mass ppm, and of which the purity excluding additive components and gas components is 99.99 mass % or higher. An object of this invention is to provide a high-quality titanium target for sputtering, which is free from fractures and cracks during high-power sputtering (high-rate sputtering) and capable of stabilizing the sputtering characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.