Patent · US Active

Continuous plasma etch process

US9530658B2 · kind B2 · utility

0Cited by
4References
22Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 12, 2015
Grant dateDec 27, 2016
Priority date—
Expiry dateAug 12, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J2237/334
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method for processing a substrate in a process chamber is provided. A plurality of cycles is provided to process the substrate, wherein each cycle comprises the steps of providing a flow of a first process gas into the process chamber, stopping the flow of the first process gas into the process chamber, providing a flow of a first transition gas into the process chamber, wherein the first transition gas neutralizes a component of the first process gas, stopping the flow of the first transition gas into the process chamber, providing a flow of a second process gas into the process chamber, stopping the second process gas into the process chamber, and maintaining a continuous plasma during the cycle.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.