Semiconductor devices having metal gate and method for manufacturing semiconductor devices having metal gate
US9530778B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2015 |
| Grant date | Dec 27, 2016 |
| Priority date | — |
| Expiry date | Aug 25, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/853
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices having metal gate include a substrate, a first nFET device formed thereon, and a second nFET device formed thereon. The first nFET device includes a first n-metal gate, and the first n-metal gate includes a third bottom barrier metal layer and an n type work function metal layer. The n type work function metal layer directly contacts the third bottom barrier layer. The second nFET device includes a second n-metal gate and the second n-metal gate includes a second bottom barrier metal layer, the n type work function metal layer, and a third p type work function metal layer sandwiched between the second bottom barrier metal layer and the n type work function metal layer. The third p type work function metal layer of the second nFET device and the third bottom barrier metal layer of the first nFET device include a same material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.