High performance heat shields with reduced capacitance
US9530798B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2015 |
| Grant date | Dec 27, 2016 |
| Priority date | — |
| Expiry date | Jun 24, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/5228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and structures for capacitively isolating a heat shield from a handle wafer of a silicon-on-insulator substrate. A contact plug is located in a trench extending through a trench isolation region in a device layer of the silicon-on-insulator substrate and at least partially through a buried insulator layer of the silicon-on-insulator substrate. The heat shield is located in an interconnect structure, which also includes a wire coupling the heat shield with the contact plug. An isolation structure is positioned between the contact plug and a portion of the handle wafer. The isolation structure provides the capacitive isolation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.