Field-isolated bulk FinFET
US9536882B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2014 |
| Grant date | Jan 3, 2017 |
| Priority date | — |
| Expiry date | Dec 18, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/859
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed are isolation techniques for bulk FinFETs. A semiconductor device includes a semiconductor substrate with a fin structure on the semiconductor substrate. The fin structure is perpendicular to the semiconductor substrate and has an upper portion and a lower portion. Source and drain regions are adjacent to the fin structure. A gate structure surrounds the upper portion of the fin structure. A well contact point is provided in the semiconductor substrate. The lower portion of the fin structure includes a sub-fin between the region surrounded by the gate structure and the semiconductor substrate. The sub-fin directly contacts the semiconductor substrate. The upper portion of the fin structure and an upper portion of the sub-fin are undoped. A lower portion of the sub-fin may be doped. Electrical potential applied from the well contact point to the lower portion of the sub-fin reduces leakage currents from the upper portion of the fin structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.