Patent · US Active

FinFET transistor comprising portions of SiGe with a crystal orientation [111]

US9536951B2 · kind B2 · utility

1Cited by
1References
14Claims
0Family size

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Key dates

Filing dateSep 9, 2015
Grant dateJan 3, 2017
Priority date—
Expiry dateSep 9, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D30/6212

Abstract

FinFET transistor comprising at least:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.