Etch stop for airgap protection
US9536982B1 · kind B1 · utility
37Cited by
9References
18Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Nov 3, 2015 |
| Grant date | Jan 3, 2017 |
| Priority date | — |
| Expiry date | Nov 3, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device that includes a gate structure on a channel region of a semiconductor device. Source and drain regions may be present on opposing sides of the channel region. The semiconductor device may further include a composite gate sidewall spacer present on a sidewall of the gate structure. The composite gate sidewall spacer may include a first composition portion having an air gap encapsulated therein, and a second composition portion that is entirely solid and present atop the first composition portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.