Epitaxial growth of material on source/drain regions of FinFET structure

US9536985B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Michael P. Chudzik · Beacon, US
• Brian J. Greene · Wappingers Falls, US
• Eric C. Harley · Lagrangeville, US
• Judson R. Holt · Wappingers Falls, US
• Yue Ke · Fishkill, US
• Rishikesh Krishnan · Poughkeepsie, US
• Renee T. Mo · Yorktown Heights, US
• Yinxiao Yang · Saratoga Springs, US

Key dates

• Filing date: Sep 29, 2014
• Grant date: Jan 3, 2017
• Expiry date: Sep 29, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/797

Abstract

A method for producing a semiconductor structure, as well as a semiconductor structure, that uses a partial removal of an insulating layer around a semiconductor fin, and subsequently epitaxially growing an additional semiconductor material in the exposed regions, while maintaining the shape of the fin with the insulating layer.