Patent · US Active

Optoelectronic device and method for manufacturing same

US9537050B2 · kind B2 · utility

8Cited by
6References
11Claims
0Family size

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Key dates

Filing dateMay 13, 2014
Grant dateJan 3, 2017
Priority date
Expiry dateMay 13, 2034

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02E10/547
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

The invention relates to an optoelectronic device and to the method for manufacturing same. The optoelectronic device (45), according to the invention includes, in particular: a semiconductor substrate (46) doped with a first type of conductivity; semiconductor contact pads (18) or a semiconductor layer on a surface (16) of the substrate which are/is respectively doped with a second type of conductivity that is the opposite of the first type; and semiconductor elements (24), each semiconductor element being in contact with a contact pad or with the layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.