Magnetic tunnel junctions
US9537088B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 13, 2015 |
| Grant date | Jan 3, 2017 |
| Priority date | — |
| Expiry date | Jul 13, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Some embodiments include a magnetic tunnel junction comprising magnetic reference material having an iridium-containing region between a multi-layer stack and a polarizer region. Some embodiments include a magnetic tunnel junction having a conductive first magnetic electrode which contains magnetic recording material, a conductive second magnetic electrode spaced from the first electrode and which contains magnetic reference material, and a non-magnetic insulator material between the first and second electrodes. The magnetic reference material of the second electrode includes a first region containing a stack of cobalt alternating with one or more of platinum, palladium and nickel; includes an iridium-containing second region over the first region; and includes a cobalt-containing third region over the second region. The third region is directly against the non-magnetic insulator material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.