Configuration and testing for magnetoresistive memory to ensure long term continuous operation
US9543041B2 · kind B2 · utility
2Cited by
3References
18Claims
0Family size
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Key dates
| Filing date | Aug 27, 2015 |
| Grant date | Jan 10, 2017 |
| Priority date | — |
| Expiry date | Aug 27, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Techniques and circuits for testing and configuring magnetic memory devices are presented. Registers and nonvolatile storage is included on the memory devices for storing values used to control testing of the memory devices as well as for configuring parameters related to both testing and normal operation. Examples include adjustment of bias voltages, sense amplifier offset values, and timing parameters to improve the efficiency of testing operations as well as improve reliability and speed of normal operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.