Silicon carbide semiconductor device and method for producing the same
US9543428B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 6, 2013 |
| Grant date | Jan 10, 2017 |
| Priority date | — |
| Expiry date | Jun 6, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/157
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An SiC semiconductor device has a p type region including a low concentration region and a high concentration region filled in a trench formed in a cell region. A p type column is provided by the low concentration region, and a p+ type deep layer is provided by the high concentration region. Thus, since a SJ structure can be made by the p type column and the n type column provided by the n type drift layer, an on-state resistance can be reduced. As a drain potential can be blocked by the p+ type deep layer, at turnoff, an electric field applied to the gate insulation film can be alleviated and thus breakage of the gate insulation film can be restricted. Therefore, the SiC semiconductor device can realize the reduction of the on-state resistance and the restriction of breakage of the gate insulation film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.