Method for fabricating contact plug in an interlayer dielectric layer
US9548239B2 · kind B2 · utility
3Cited by
5References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 2, 2015 |
| Grant date | Jan 17, 2017 |
| Priority date | — |
| Expiry date | May 28, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76879
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A gate structure is first formed on a substrate and an interlayer dielectric (ILD) layer is formed around the gate structure, a dielectric layer is formed on the ILD layer and the gate structure, an opening is formed in the dielectric layer and the ILD layer, and an organic dielectric layer (ODL) is formed on the dielectric layer and in the opening. After removing part of the ODL, part of the dielectric layer to extend the opening, and then the remaining ODL, a contact plug is formed in the opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.