Semiconductor device and insulated gate bipolar transistor with barrier structure

US9553179B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Antonio Vellei · Villach, AT
• Johannes Georg Laven · Taufkirchen, DE
• Roman Baburske · Otterfing, DE
• Alexander Philippou · Munich, DE

Key dates

• Filing date: Jan 31, 2014
• Grant date: Jan 24, 2017
• Expiry date: Jan 31, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/256

Abstract

A semiconductor device includes a semiconductor mesa which is formed between cell trench structures extending from a first surface into a semiconductor body. The semiconductor mesa includes a body zone forming a first pn junction with a drift zone between the body zone and a second surface opposite to the first surface. Source zones are arranged along a longitudinal axis of the semiconductor mesa at a first distance from each other and form second pn junctions with the body zone. A barrier structure, which has the conductivity type of the source zones, forms at least one of a unipolar homojunction with the drift zone and a pn junction with the body zone at least outside a vertical projection of the source zones perpendicular to the first surface. The barrier structure may be absent in the vertical projection of the source zones.