Patent · US Active

Method for improved fin profile

US9553194B1 · kind B1 · utility

13Cited by

0References

16Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Nicholas V. LiCausi · Watervliet, US
Zhenyu Hu · Leonberg, DE
Hong Yu · Rexford, US
Jinping Liu · Ballston Lake, US

Key dates

Filing date	Jul 29, 2015
Grant date	Jan 24, 2017
Priority date	—
Expiry date	Jul 29, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/834
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method can include performing an etching process to define a fin trench having a first depth, the first depth being less that a target height of fin. A method can also include forming a layer to protect sidewalls defining the fin trench. A method can also include performing a second etching process to increase a depth of fin trench.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.