Resistive memory elements including buffer materials, and related memory cells, memory devices, electronic systems

US9553263B1 · kind B1 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Christopher W. Petz · Boise, US
• Yongjun Jeff Hu · Boise, US
• Scott E. Sills · Boise, US
• D. V. Nirmal Ramaswamy · Boise, US

Key dates

• Filing date: Nov 6, 2015
• Grant date: Jan 24, 2017
• Expiry date: Nov 6, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/1441
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A resistive memory element comprises a first electrode, an active material over the first electrode, a buffer material over the active material and comprising longitudinally extending, columnar grains of crystalline material, an ion reservoir material over the buffer material, and a second electrode over the ion reservoir material. A memory cell, a memory device, an electronic system, and a method of forming a resistive memory element are also described.