Patent · US Active

Tamper detection and response in a memory device

US9569640B2 · kind B2 · utility

1Cited by
14References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 21, 2015
Grant dateFeb 14, 2017
Priority date
Expiry dateAug 21, 2035

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2013/0073
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A technique for detecting tampering attempts directed at a memory device includes setting each of a plurality of detection memory cells to an initial predetermined state, where corresponding portions of the plurality of detection memory cells are included in each of the arrays of data storage memory cells on the memory device. A plurality of corresponding reference bits on the memory device permanently store information representative of the initial predetermined state of each of the detection memory elements. When a tamper detection check is performed, a comparison between the reference bits and the current state of the detection memory cells is used to determine whether any of the detection memory cells have changed state from their initial predetermined states. Based on the comparison, a tamper detect indication is flagged if a threshold level of change is determined. Once a tampering attempt is detected, responses on the memory device include disabling one or more memory operations, generating a mock current to emulate current expected during normal operation, and erasing data stored on the memory device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.