Microelectronic method for etching a layer

US9570317B2 · kind B2 · utility

Assignees

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR
• CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE · FR
• UNIVERSITÉ JOSEPH FOURIER · FR

Inventors

• Nicolas Posseme · Grenoble, FR
• Olivier Joubert · Meylan, FR
• Laurent Vallier · Montbonnot-Saint-Martin, FR

Key dates

• Filing date: Dec 20, 2013
• Grant date: Feb 14, 2017
• Expiry date: Dec 20, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/32133
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A microelectronic method for etching a layer to be etched, including: modifying the layer to be etched from a surface of the layer to be etched and over a depth corresponding to at least a portion of thickness of the layer to be etched to form a film, with the modifying including implanting light ions into the layer to be etched; and removing the film includes a selective etching of the film relative to at least one layer underlying the film.