Super junction semiconductor device having a compensation structure

US9570596B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Stefan Gamerith · Villach, AT
• Armin Willmeroth · Friedberg, DE
• Franz Hirler · Isen, DE

Key dates

• Filing date: Apr 6, 2015
• Grant date: Feb 14, 2017
• Expiry date: Apr 6, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D8/00

Abstract

A super junction semiconductor device includes a semiconductor portion including mesa regions protruding from a base section and spatially separated in a lateral direction parallel to a first surface of the semiconductor portion, and a compensation structure covering at least sidewalls of the mesa regions. The compensation structure includes at least two first compensation layers of a first conductivity type, at least two second compensation layers of a complementary second conductivity type, and at least one interdiffusion layer between one of the first and one of the second compensation layers.