Field-effect semiconductor device having alternating n-type and p-type pillar regions arranged in an active area

US9570607B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Hans-Joachim Schulze · Taufkirchen, DE
• Franz-Josef Niedernostheide · Hagen am Teutoburger Wald, DE
• Anton Mauder · Kolbermoor, DE
• Joachim Weyers · Grevesmühlen, DE
• Franz Hirler · Isen, DE
• Markus Schmitt · Neubiberg, DE
• Armin Willmeroth · Friedberg, DE
• Björn Fischer · Saerbeck, DE
• Stefan Gamerith · Villach, AT

Key dates

• Filing date: Nov 6, 2015
• Grant date: Feb 14, 2017
• Expiry date: Nov 6, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/111

Abstract

In a field-effect semiconductor device, alternating first n-type and p-type pillar regions are arranged in the active area. The first n-type pillar regions are in Ohmic contact with the drain metallization. The first p-type pillar regions are in Ohmic contact with the source metallization. An integrated dopant concentration of the first n-type pillar regions substantially matches that of the first p-type pillar regions. A second p-type pillar region is in Ohmic contact with the source metallization, arranged in the peripheral area and has an integrated dopant concentration smaller than that of the first p-type pillar regions divided by a number of the first p-type pillar regions. A second n-type pillar region is arranged between the second p-type pillar region and the first p-type pillar regions, and has an integrated dopant concentration smaller than that of the first n-type pillar regions divided by a number of the first n-type pillar regions.