Magnetic device and method of fabricating the same
US9570670B2 · kind B2 · utility
7Cited by
2References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 8, 2013 |
| Grant date | Feb 14, 2017 |
| Priority date | — |
| Expiry date | Feb 8, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Provided are a magnetic memory device and a method of fabricating the same. The device may include a magnetic tunnel junction including a lower magnetic structure, an upper magnetic structure, and a tunnel barrier interposed therebetween. The tunnel barrier may have a width greater than that of the lower magnetic structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.