Enhancing electrical property and UV compatibility of ultrathin blok barrier film
US9580801B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 7, 2014 |
| Grant date | Feb 28, 2017 |
| Priority date | — |
| Expiry date | Nov 7, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02167
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Embodiments described herein generally relate to the formation of a UV compatible barrier stack. Methods described herein can include delivering a process gas to a substrate positioned in a process chamber. The process gas can be activated to form an activated process gas, the activated process gas forming a barrier layer on a surface of the substrate, the barrier layer comprising silicon, carbon and nitrogen. The activated process gas can then be purged from the process chamber. An activated nitrogen-containing gas can be delivered to the barrier layer, the activated nitrogen-containing gas having a N2:NH3 ratio of greater than about 1:1. The activated nitrogen-containing gas can then be purged from the process chamber. The above elements can be performed one or more times to deposit the barrier stack.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.