Silane and borane treatments for titanium carbide films

US9583348B2 · kind B2 · utility

Assignee

• ASM IP Holding B.V. · NL

Inventors

• Jerry Chen · Chandler, US
• Vladimir Machkaoutsan · Leuven, BE
• Brennan Milligan · Apache Junction, US
• Jan Willem Maes · Wilrijk, BE
• Suvi Haukka · Helsinki, FI
• Eric James Shero · Phoenix, US
• Tom E. Blomberg · Vantaa, FI
• Dong Li · Phoenix, US

Key dates

• Filing date: Jan 4, 2016
• Grant date: Feb 28, 2017
• Expiry date: Jan 4, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/28568
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods of treating metal-containing thin films, such as films comprising titanium carbide, with a silane/borane agent are provided. In some embodiments a film comprising titanium carbide is deposited on a substrate by an atomic layer deposition (ALD) process. The process may include a plurality of deposition cycles involving alternating and sequential pulses of a first source chemical that comprises titanium and at least one halide ligand, a second source chemical comprising metal and carbon, wherein the metal and the carbon from the second source chemical are incorporated into the thin film, and a third source chemical, wherein the third source chemical is a silane or borane that at least partially reduces oxidized portions of the titanium carbide layer formed by the first and second source chemicals. In some embodiments treatment forms a capping layer on the metal carbide film.