Methods for forming semiconductor devices and semiconductor device structures
US9583381B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 14, 2013 |
| Grant date | Feb 28, 2017 |
| Priority date | — |
| Expiry date | Apr 22, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming semiconductor devices and features in semiconductor device structures include conducting an anti-spacer process to remove portions of a first mask material to form first openings extending in a first direction. Another anti-spacer process is conducted to remove portions of the first mask material to form second openings extending in a second direction at an angle to the first direction. Portions of a second mask material underlying the first mask material at intersections of the first openings and second openings are removed to form holes in the second mask material and to expose a substrate underlying the second mask material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.