Method of manufacturing a semiconductor device using semiconductor measurement system
US9583402B2 · kind B2 · utility
0Cited by
6References
19Claims
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Key dates
| Filing date | Jul 9, 2015 |
| Grant date | Feb 28, 2017 |
| Priority date | — |
| Expiry date | Jul 9, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/20
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes loading a substrate into a sensing chamber; while the substrate is in the sensing chamber, performing a spectral analysis of the substrate; transferring the substrate between the sensing chamber and a processing chamber coupled to the sensing chamber; processing the substrate in the processing chamber to form at least a first layer and/or pattern on the substrate; and based on at least the spectral analysis, determining whether a parameter resulting from the formation of first layer and/or pattern is satisfied.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.