Methods of manufacturing semiconductor devices
US9583592B2 · kind B2 · utility
0Cited by
6References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 27, 2015 |
| Grant date | Feb 28, 2017 |
| Priority date | — |
| Expiry date | Apr 27, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0172
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of manufacturing a semiconductor device, a dummy gate structure is formed on a substrate. A first spacer layer is formed on the substrate to cover the dummy gate structure. A nitridation process is performed on the first spacer layer. An upper portion of the substrate adjacent to the dummy gate structure is removed to form a trench. An inner wall of the trench is cleaned. An epitaxial layer is formed to fill the trench. The dummy gate structure is replaced with a gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.