Wetting wave front control for reduced air entrapment during wafer entry into electroplating bath
US9587322B2 · kind B2 · utility
6Cited by
74References
16Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 14, 2015 |
| Grant date | Mar 7, 2017 |
| Priority date | — |
| Expiry date | Apr 14, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods described herein manage wafer entry into an electrolyte so that air entrapment due to initial impact of the wafer and/or wafer holder with the electrolyte is reduced and the wafer is moved in such a way that an electrolyte wetting wave front is maintained throughout immersion of the wafer also minimizing air entrapment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.