Split-gate semiconductor device with L-shaped gate
US9589805B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 4, 2014 |
| Grant date | Mar 7, 2017 |
| Priority date | — |
| Expiry date | Aug 4, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
Abstract
A semiconductor device having a substrate, a dielectric layer over the substrate, a first gate conductor, an inter-gate dielectric structure and a second gate conductor is disclosed. A gate dielectric structure is disposed between the first gate conductor and the dielectric layer, and may include two or more dielectric films disposed in an alternating manner. The inter-gate dielectric structure may be disposed between the first gate conductor and the second gate conductor, and may include two or more dielectric films disposed in an alternating manner. The second gate conductor is formed in an L shape such that the second gate has a relatively low aspect ratio, which allows for a reduction in spacing between adjacent gates, while maintaining the required electrical isolation between the gates and contacts that may subsequently be formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.