Self-aligned cross-point phase change memory-switch array
US9590012B2 · kind B2 · utility
28Cited by
3References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2014 |
| Grant date | Mar 7, 2017 |
| Priority date | — |
| Expiry date | Jun 30, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
Subject matter disclosed herein relates to a memory device, and more particularly to a self-aligned cross-point phase change memory-switch array and methods of fabricating same.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.