Methods for etching via atomic layer deposition (ALD) cycles

US9595466B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Xinyu Fu · Pleasanton, US
• Srinivas Gandikota · Santa Clara, US
• Mei Chang · Saratoga, US
• Seshadri Ganguli · Sunnyvale, US
• Guoqiang Jian · San Jose, US
• Yixiong Yang · San Jose, US
• Vikash Banthia · Los Altos, US
• Jonathan Bakke · Sunnyvale, US

Key dates

• Filing date: May 20, 2015
• Grant date: Mar 14, 2017
• Expiry date: May 20, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76879
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods for etching a substrate are provided herein. In some embodiments, a method for etching a substrate disposed within a processing volume of a process chamber includes: (a) exposing a first layer disposed atop the substrate to a first gas comprising tungsten chloride (WClx) for a first period of time and at a first pressure, wherein x is 5 or 6; (b) purging the processing volume of the first gas using an inert gas for a second period of time; (c) exposing the substrate to a hydrogen-containing gas for a third period of time to etch the first layer after purging the processing volume of the first gas; and (d) purging the processing volume of the hydrogen-containing gas using the inert gas for a fourth period of time.