Patent · US Active

Methods of fabricating storage elements and structures having edgeless features for programmable layer(s)

US9595671B1 · kind B1 · utility

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17Claims
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Assignee

Inventors

Key dates

Filing dateJul 19, 2016
Grant dateMar 14, 2017
Priority date
Expiry dateJul 19, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N70/8833

Abstract

A method can include forming a bottom structure with a top surface and a side surface that form at least one edge; forming an opening with sloped sides through at least one insulating layer to expose at least a portion of the top surface of the bottom structure; forming a programmable layer over the at least one edge, in contact with the sloped sides of the opening and the top surface of the bottom structure; and forming a top layer over the programmable layer and opening; wherein the programmable layer is programmable between at least two different impedance states.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.