Contact pad
US9607955B2 · kind B2 · utility
0Cited by
6References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 10, 2010 |
| Grant date | Mar 28, 2017 |
| Priority date | — |
| Expiry date | Mar 4, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/1306
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to forming multi-layered contact pads for a semiconductor device, wherein the various layers of the contact pad are formed using one or more thin-film deposition processes, such as an evaporation process. Each contact pad includes an adhesion layer, which is formed over the device structure for the semiconductor device; a titanium nitride (TiN) barrier layer, which is formed over the adhesion layer; and an overlay layer, which is formed over the barrier layer. At least the titanium nitride (TiN) barrier layer is formed using an evaporation process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.