N-channel demos device
US9608109B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 21, 2016 |
| Grant date | Mar 28, 2017 |
| Priority date | — |
| Expiry date | Apr 21, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An n-channel DEMOS device a pwell finger defining a length and a width direction formed within a doped surface layer. A first nwell is on one side of the pwell finger including a source and a second nwell on an opposite side of the pwell finger includes a drain. A gate stack is over a channel region the pwell finger between the source and drain. A field dielectric layer is on the surface layer defining a first active area including a first active area boundary along the width direction (WD boundary) that has the channel region therein. A first p-type layer is outside the first active area at least a first minimum distance from the WD boundary and a second p-type layer is doped less and is closer to the WD boundary than the first minimum distance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.