Control of etch rate using modeling, feedback and impedance match
US9620334B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 10, 2014 |
| Grant date | Apr 11, 2017 |
| Priority date | — |
| Expiry date | Aug 7, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for achieving an etch rate is described. The method includes receiving a calculated variable associated with processing a work piece in a plasma chamber. The method further includes propagating the calculated variable through a model to generate a value of the calculated variable at an output of the model, identifying a calculated processing rate associated with the value, and identifying based on the calculated processing rate a pre-determined processing rate. The method also includes identifying a pre-determined variable to be achieved at the output based on the pre-determined processing rate and identifying a characteristics associated with a real and imaginary portions of the pre-determined variable. The method includes controlling variable circuit components to achieve the characteristics to further achieve the pre-determined variable.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.