Self limiting lateral atomic layer etch
US9620376B2 · kind B2 · utility
86Cited by
6References
16Claims
0Family size
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Key dates
| Filing date | Aug 19, 2015 |
| Grant date | Apr 11, 2017 |
| Priority date | — |
| Expiry date | Aug 19, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02238
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of and apparatuses for laterally etching semiconductor substrates using an atomic layer etch process involving exposing an oxidized surface of a semiconductor substrate to a fluorine-containing etch gas and heating the substrate to remove non-volatile etch byproducts by a sublimation mechanism are provided herein. Methods also including additionally pulsing a hydrogen-containing gas when pulsing the fluorine-containing etch gas. Apparatuses also include an ammonia mixing manifold suitable for separately preparing and mixing ammonia for use in various tools.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.