Substrate bonding with diffusion barrier structures
US9620481B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 19, 2015 |
| Grant date | Apr 11, 2017 |
| Priority date | — |
| Expiry date | May 19, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/05442
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metallic dopant element having a greater oxygen-affinity than copper is introduced into, and/or over, surface portions of copper-based metal pads and/or surfaces of a dielectric material layer embedding the copper-based metal pads in each of two substrates to be subsequently bonded. A dopant-metal silicate layer may be formed at the interface between the two substrates to contact portions of metal pads not in contact with a surface of another metal pad, thereby functioning as an oxygen barrier layer, and optionally as an adhesion material layer. A dopant metal rich portion may be formed in peripheral portions of the metal pads in contact with the dopant-metal silicate layer. A dopant-metal oxide portion may be formed in peripheral portions of the metal pads that are not in contact with a dopant-metal silicate layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.