Electronic device including a channel layer including gallium nitride

US9620598B2 · kind B2 · utility

Assignee

• SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC · US

Inventors

• Chun-Li Liu · Scottsdale, US
• Ali Salih · Mesa, US

Key dates

• Filing date: Jun 17, 2015
• Grant date: Apr 11, 2017
• Expiry date: Jun 17, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/518

Abstract

An electronic device can transistor having a channel layer that includes a compound semiconductor material. In an embodiment, the channel layer overlies a semiconductor layer that includes a carrier barrier region and a carrier accumulation region. The charge barrier region can help to reduce the likelihood that de-trapped carriers from the channel layer will enter the charge barrier region, and the charge accumulation region can help to repel carriers in the channel layer away from the charge barrier layer. In another embodiment, a barrier layer overlies the channel layer. Embodiments described herein may help to produce lower dynamic on-resistance, lower leakage current, another beneficial effect, or any combination thereof.