Patent · US Active

Semiconductor device using EMC wafer support system and fabricating method thereof

US9627368B2 · kind B2 · utility

8Cited by
0References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 19, 2013
Grant dateApr 18, 2017
Priority date
Expiry dateNov 19, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/15311
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Provided are a semiconductor device using, for example, an epoxy molding compound (EMC) wafer support system and a fabricating method thereof, which can, for example, adjust a thickness of the overall package in a final stage of completing the device while shortening a fabricating process and considerably reducing the fabrication cost. An example semiconductor device may comprise a first semiconductor die that comprises a bond pad and a through silicon via (TSV) connected to the bond pad; an interposer comprising a redistribution layer connected to the bond pad or the TSV and formed on the first semiconductor die, a second semiconductor die connected to the redistribution layer of the interposer and positioned on the interposer; an encapsulation unit encapsulating the second semiconductor die, and a solder ball connected to the bond pad or the TSV of the first semiconductor die.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.