Super junction semiconductor device having strip structures in a cell area

US9627471B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Franz Hirler · Isen, DE
• Hans Weber · Villach, AT
• Stefan Gamerith · Villach, AT
• Armin Willmeroth · Friedberg, DE

Key dates

• Filing date: Jul 16, 2015
• Grant date: Apr 18, 2017
• Expiry date: Jul 16, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/256

Abstract

A super junction semiconductor device includes a semiconductor portion having strip structures in a cell area. Each strip structure has a compensation structure with first and second sections inversely provided on opposite sides of a fill structure. Each section has first and second compensation layers of complementary conductivity types. The strip structures are linear stripes extending through the cell area in a first lateral direction and into an edge area surrounding the cell area in lateral directions. Each strip structure has an end section with a termination portion in the edge area in which the first compensation layer of the first section is connected with the first compensation layer of the second section via a first conductivity layer, and the second compensation layer of the first section is connected with the second compensation layer of the second section via a second conductivity layer.